Pascal and Francis Bibliographic Databases

Help

Search results

Your search

au.\*:("ECKART, D. W")

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 10 of 10

  • Page / 1
Export

Selection :

  • and

Shallow angle lapping of III-V semiconductor thin layer structures by ion beam/chemical etching techniqueECKART, D. W; CASAS, L. M.Applied physics letters. 1993, Vol 63, Num 8, pp 1041-1043, issn 0003-6951Article

In situ FTIR and surface analysis of the reaction of trimethylgallium and ammoniaMAZZARESE, D; TRIPATHI, A; CONNER, W. C et al.Journal of electronic materials. 1989, Vol 18, Num 3, pp 369-377, issn 0361-5235, 9 p.Article

Dielectric properties of perovskite antimonatesTIDROW, S. C; TAUBER, A; WILBER, W. D et al.IEEE transactions on applied superconductivity. 1997, Vol 7, Num 2, pp 1769-1771, issn 1051-8223, 2Conference Paper

The microstructure and electrical properties of nonalloyed epitaxial Au-Ge ohmic contacts to n-GaAsLEE, H. S; COLE, M. W; VAVRA, W et al.Journal of applied physics. 1992, Vol 72, Num 10, pp 4773-4780, issn 0021-8979Article

Magnetron reactive ion etching of GaAs in a BCl3 dischargeMCLANE, G. F; MEYYAPPAN, M; LEE, H. S et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 2, pp 333-336, issn 1071-1023Conference Paper

Microstructure of visibly luminescent porous siliconCOLE, M. W; HARVEY, J. F; LUX, R. A et al.Applied physics letters. 1992, Vol 60, Num 22, pp 2800-2802, issn 0003-6951Article

Mechanisms for the formation of low temperature, non-alloyed Au-Ge ohmic contacts to n-GaAsDORNATH-MOR, M. A; COLE, M. W; COSANDEY, F et al.Journal of electronic materials. 1990, Vol 19, Num 11, pp 1247-1255, issn 0361-5235Conference Paper

Magnetron-enhanced reactive ion etching of GaAs and AlGaAs using CH4/H2/ArMCLANE, G. F; COLE, M. W; ECKART, D. W et al.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1993, Vol 11, Num 4, pp 1753-1757, issn 0734-2101, 2Conference Paper

Biaxial and uniaxial stress in gallium arsenide on silicon : a linear polarized photoluminescence studySHEN, H; DUTTA, M; ECKART, D. W et al.Journal of applied physics. 1990, Vol 68, Num 1, pp 369-371, issn 0021-8979Article

Electrode effects in the sweeping of alpha quartzGUALTIERI, J. G; LAREAU, R. T; ECKART, D. W et al.IEEE transactions on ultrasonics, ferroelectrics, and frequency control. 1990, Vol 37, Num 5, pp 393-403, issn 0885-3010Article

  • Page / 1